Effect of Polarization on the Band Structure at a Charged Domain Wall in Ferroelectric Materials

Document
Abstract

The interplay between electron charge, spin, and ferroelectric polarization is under-explored for conducting ferroelectric domain walls (DWs). DWs are interfaces that separate regions (domains) within a material that have different orientations of spontaneous polarization. We investigated the electronic band structure of t2g electrons, confined to 90° charged do main walls (CDWs) in barium titanate (BaTiO3), a prototypical perovskite ferroelectric. A key novel aspect of our study is the explicit inclusion of both orbital and spin degrees of freedom in the Hamiltonian. This leads to an Ising-type spin-orbit coupling (SOC). We constructed a tight-binding (TB) model for t2g electrons that is constrained by symmetries of the DW, including time-reversal, mirror, and rotational symmetries. First-principles density functional theory (DFT) calculations were performed to extract the TB parame ters. Our findings offer new insights into spin-orbit interactions at ferroelectric domain walls and open avenues for their potential use in next-generation electronic and spintronic devices

    Item Description
    Type
    Contributors
    Creator (cre): Nasir, Maryam
    Thesis advisor (ths): Atkinson, William WA
    Degree committee member (dgc): Bradac, Carlo CB
    Degree committee member (dgc): de Haan, Hendrick
    Degree committee member (dgc): Ramachandran, Ganesh GR
    Degree granting institution (dgg): Trent University
    Date Issued
    2025
    Date (Unspecified)
    2025
    Place Published
    Peterborough, ON
    Language
    Extent
    77 pages
    Rights
    Copyright is held by the author, with all rights reserved, unless otherwise noted.
    Subject (Topical)
    Local Identifier
    TC-OPET-32239878
    Publisher
    Trent University
    Degree
    Master of Science (M.Sc.): Materials Science